| 摘要 |
A non-linear element, such as a diode, in which an oxide semiconductor is used and a rectification property is favorable is provided. In a thin film transistor including an oxide semiconductor in which the hydrogen concentration is less than or equal to 5×1019/cm3, The work function &phgr;ms of a source electrode in contact with the oxide semiconductor, the work function &phgr;md of a drain electrode in contact with the oxide semiconductor, and electron affinity χ of the oxide semiconductor satisfy &phgr;ms≦̸χ<&phgr;md. By electrically connecting a gate electrode and the drain electrode of the thin film transistor, a non-linear element with a more favorable rectification property can be achieved. |
