发明名称 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a silver alloy sputtering target for forming a conductive film, which is capable of suppressing splashing, even when a high electric power is applied to a large target due to the size increase of the target, and is capable of forming a film that is excellent in corrosion resistance and heat resistance and has a low electrical resistance, and to provide a method for manufacturing the same. <P>SOLUTION: The silver alloy sputtering target for forming a conductive film comprises a silver alloy having a composition comprising 0.1-1.5 mass% In, 0.05-0.8 mass% Ce and/or Eu in total and the balance being Ag and inevitable impurities, wherein the average grain size of the silver alloy crystal grains is 120-250μm and the variation in the crystal grain size is within≤20% of the average grain size. <P>COPYRIGHT: (C)2013,JPO&INPIT</p>
申请公布号 JP5669015(B2) 申请公布日期 2015.02.12
申请号 JP20110084954 申请日期 2011.04.06
申请人 发明人
分类号 C23C14/34;C22C5/06;C22F1/14 主分类号 C23C14/34
代理机构 代理人
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