| 摘要 |
The problem addressed by the present invention is to provide a slurry for CMP, with which it is possible to suppress polishing scratches and dishing, and to achieve a higher polishing speed and dispersion stability. This slurry for CMP is characterized in that the polishing particles used in the polishing material are particles having a core/shell structure comprising a core layer and a shell layer, the core layer (2) containing an oxide of at least one element selected from aluminum, scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, gallium, germanium, zirconium, indium, tin, yttrium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, tungsten, bismuth, thorium and alkaline earth metals, and the shell layer (4) containing cerium oxide. |
