| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To clean a wafer, or the like, effectively by the SPM method, and to recycle solution after cleaning, as desired. <P>SOLUTION: In the cleaning method, sulphuric acid solution and hydrogen peroxide water are mixed, and the mixture is heated and used for cleaning a material to be cleaned. The cleaning system comprises a liquid mixing/storing section where the sulphuric acid solution and hydrogen peroxide water are mixed and stored, a heater which heats the mixture supplied from the liquid mixing/storing section while passing, and a cleaning section where the heated mixture supplied from the heater is used as cleaning liquid. A mixed solution having strong oxidizing power is obtained by mixing the sulphuric acid solution and hydrogen peroxide water, and a material to be cleaned can be cleaned effectively using the mixed solution which is heated after mixing. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
