| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile memory device that allows easily achieving higher capacity of a three-dimensional memory cell array.SOLUTION: A non-volatile memory device includes: a first stacked electrode provided on a ground layer; a second stacked electrode parallelly disposed with the first stacked electrode; a plurality of first semiconductor layers penetrating through the first stacked electrode; and a second semiconductor layer penetrating through the second stacked electrode. The non-volatile memory device further includes: memory films provided between the first stacked electrode and the first semiconductor layers and between the second stacked electrode and the second semiconductor layer; and connection portions provided between the ground layer and the first stacked electrode and between the ground layer and the second stacked electrode. The connection portions are electrically connected to one end of each of the plurality of first semiconductor layers and one end of the second semiconductor layer. |
