| 发明名称 |
METHOD OF LOCALLY STRESSING A SEMICONDUCTOR LAYER |
| 摘要 |
The disclosure concerns a method of stressing a semiconductor layer comprising: depositing, over a semiconductor on insulator (SOI) structure having a semiconductor layer in contact with an insulating layer, a stress layer; locally stressing said semiconductor layer by forming one or more openings in said stress layer, said openings being aligned with first regions of said semiconductor layer in which transistor channels are to be formed; and deforming second regions of said insulating layer adjacent to said first regions by temporally decreasing, by annealing, the viscosity of said insulator layer. |
| 申请公布号 |
US2015044827(A1) |
申请公布日期 |
2015.02.12 |
| 申请号 |
US201414452041 |
申请日期 |
2014.08.05 |
| 申请人 |
STMicoelectronics SA ;STMicoelectronics, Inc. |
发明人 |
Morin Pierre;Rideau Denis;Nier Olivier |
| 分类号 |
H01L29/66;H01L21/02;H01L29/78;H01L21/324;H01L21/762 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of stressing a semiconductor layer, comprising:
depositing a stress layer over a semiconductor on insulator (SOI) structure, the SOI structure having a semiconductor layer in contact with an insulating layer; locally stressing said semiconductor layer by forming one or more openings in said stress layer, said openings being aligned with first regions of said semiconductor layer in which transistor channels are to be formed; and in an annealing step, deforming second regions of said insulating layer adjacent to said first regions by temporarily decreasing a viscosity of said insulator layer. |
| 地址 |
Montrouge FR |
