| 发明名称 |
METHOD OF FABRICATING INTEGRATED SEMICONDUCTOR DEVICE AND STRUCTURE THEREOF |
| 摘要 |
A method of fabricating an integrated semiconductor device, comprising: providing a substrate having a first region and a second region; and forming a semiconductor unit on the first region and forming a micro electro mechanical system (MEMS) unit on the second region in one process. |
| 申请公布号 |
US2015044808(A1) |
申请公布日期 |
2015.02.12 |
| 申请号 |
US201414495940 |
申请日期 |
2014.09.25 |
| 申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
Huang Hsueh-I;Lee Ming-Tung;Tu Shuo-Lun |
| 分类号 |
B81C1/00 |
主分类号 |
B81C1/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating an integrated semiconductor device, comprising:
providing a substrate having a first region and a second region; forming a plurality of barrier layer between the first and the second region; forming a semiconductor unit on the first region and forming a micro electro mechanical system (MEMS) unit on the second region; and connecting the semiconductor unit on the first region and a micro electro mechanical system (MEMS) unit on the second region with the plurality barrier layers. |
| 地址 |
Hsinchu TW |
