发明名称 |
METHOD OF MANUFACTURING LIGHT EMITTING ELEMENT |
摘要 |
A method of manufacturing a light emitting element includes, sequentially, (a) forming a mask layer for selective growth; (b) forming a layered structure body by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film; (d) fixing the second light reflecting layer to a support substrate; (e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the mask layer; and (f) forming a first light reflecting layer formed from a multilayer film and a first electrode on the first surface of the first compound semiconductor layer. |
申请公布号 |
US2015044795(A1) |
申请公布日期 |
2015.02.12 |
申请号 |
US201414449804 |
申请日期 |
2014.08.01 |
申请人 |
Sony Corporation |
发明人 |
Futagawa Noriyuki;Hamaguchi Tatsushi;Kuramoto Masaru |
分类号 |
H01S5/028;H01S5/183;H01S5/02;H01S5/30 |
主分类号 |
H01S5/028 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a light emitting element comprising, sequentially:
(a) forming a mask layer for selective growth formed from a material different from a material that configures a first compound semiconductor layer on a region outside an element forming region on a substrate for manufacturing a light emitting element; (b) forming a layered structure body by layering a first compound semiconductor layer formed from a GaN-based compound semiconductor, which has a first surface and a second surface opposing the first surface, an active layer formed from a GaN-based compound semiconductor, which contacts the second surface of the first compound semiconductor layer, and a second compound semiconductor layer formed from a GaN-based compound semiconductor, which has a first surface and a second surface opposing the first surface, and in which the first surface contacts the active layer on the element forming region; (c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film; (d) fixing the second light reflecting layer to a support substrate; (e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the mask layer; and (f) forming a first light reflecting layer formed from a multilayer film and a first electrode on the first surface of the first compound semiconductor layer. |
地址 |
Tokyo JP |