发明名称 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE
摘要 According to one embodiment, a semiconductor light emitting device includes a light emitting section, a light transmitting section, a wavelength conversion section, a first conductive section, a second conductive section and a sealing section. The light emitting section includes a first major surface, a second major surface opposite from the first major surface, and a first electrode section and a second electrode section formed on the second major surface. The light transmitting section is provided on a side of the first major surface. The wavelength conversion section is provided over the light transmitting section. The wavelength conversion section is formed from a resin mixed with a phosphor, and hardness of the cured resin is set to exceed 10 in Shore D hardness.
申请公布号 US2015044793(A1) 申请公布日期 2015.02.12
申请号 US201414491719 申请日期 2014.09.19
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 NAKA Tomomichi
分类号 H01L33/50;H01L33/54 主分类号 H01L33/50
代理机构 代理人
主权项 1. A method for manufacturing a semiconductor light emitting device, the device including: a light emitting section including a first major surface, a second major surface opposite from the first major surface, and a first electrode section and a second electrode section formed on the second major surface; and a wavelength conversion section provided on a side of the first major surface and formed from a resin mixed with a phosphor, the method comprising: setting hardness of the cured resin to exceed 10 in Shore D hardness.
地址 MINATO-KU JP