METHOD OF FORMING MAGNETIC MEMORY DEVICES

摘要

Provided is a method of forming a magnetic memory device. A first magnetic layer, a tunnel barrier, and a second magnetic layer are deposited on a substrate. The second magnetic layer, the tunnel barrier, and the first magnetic layer are etched to form magnetic tunnel junction structures. An ion beam etching process is performed using an oxygen-containing source gas to remove etching by-products on sidewalls of the magnetic tunnel junction structure and to oxidize the sidewalls of the magnetic tunnel junction structures.

主权项

1. A method of forming a magnetic memory device, comprising:
sequentially depositing a first magnetic layer, a tunnel barrier, and a second magnetic layer on a substrate; etching the second magnetic layer, the tunnel barrier layer, and the first magnetic layer to form magnetic tunnel junction structures; and performing an ion beam etching process on the magnetic tunnel junction structures using an oxygen-containing reactive source gas to remove etching by-products on sidewalls of the magnetic tunnel junction structures and to oxidize the sidewalls of the magnetic tunnel junction structures.