| 发明名称 |
WIRING SUBSTRATE AND MANUFACTURING METHOD THEREFOR |
| 摘要 |
A wiring substrate includes a semiconductor substrate, an insulator and a plurality of columnar conductors. The insulator is made of an insulating material filled in a groove or hole provided in the semiconductor substrate. The plurality of columnar conductors are filled in grooves or holes provided in the insulator. The grooves or holes are arranged at a narrow pitch in a plane of the insulator. The insulating material has a Si—O bond obtained by reacting Si particles with an organic Si compound. |
| 申请公布号 |
US2015041990(A1) |
申请公布日期 |
2015.02.12 |
| 申请号 |
US201414446621 |
申请日期 |
2014.07.30 |
| 申请人 |
NAPRA CO., LTD. |
发明人 |
Sekine Shigenobu;Ikeda Hiroaki;Sekine Yurina |
| 分类号 |
H01L23/498;H01L21/768 |
主分类号 |
H01L23/498 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A wiring substrate comprising a semiconductor substrate, an insulator and a plurality of columnar conductors,
the insulator being made of an insulating material filled in a groove or hole provided in the semiconductor substrate, the plurality of columnar conductors being filled in grooves or holes provided in the insulator, the grooves or holes being arranged at a narrow pitch in a plane of the insulator, the insulating material having a Si—O bond obtained by reacting Si particles with an organic Si compound. |
| 地址 |
Tokyo JP |
