发明名称 |
IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME |
摘要 |
An image sensor includes a semiconductor substrate integrated with at least one first photo-sensing device sensing light in a first wavelength region and at least one second photo-sensing device sensing light in a second wavelength region shorter than the first wavelength region, a photoelectric device including a pair of electrodes facing each other and a light absorption layer between the electrodes, the photoelectric device selectively absorbing light in a third wavelength region between the first wavelength region and the second wavelength region, and a nanostructural body between the semiconductor substrate and the photoelectric device, the nanostructural body including at least two parts having different optical paths. |
申请公布号 |
US2015041940(A1) |
申请公布日期 |
2015.02.12 |
申请号 |
US201414174211 |
申请日期 |
2014.02.06 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
LEE Gae Hwang;KIM Kyu Sik;JIN Yong Wan |
分类号 |
H01L31/0232 |
主分类号 |
H01L31/0232 |
代理机构 |
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代理人 |
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主权项 |
1. An image sensor, comprising:
a semiconductor substrate integrated with at least one first photo-sensing device sensing light in a first wavelength region and at least one second photo-sensing device sensing light in a second wavelength region shorter than the first wavelength region; a photoelectric device including a pair of electrodes facing each other and a light absorption layer between the electrodes, the photoelectric device selectively absorbing light in a third wavelength region between the first wavelength region and the second wavelength region; and a nanostructural body between the semiconductor substrate and the photoelectric device, the nanostructural body including at least two parts having different optical paths. |
地址 |
Suwon-Si KR |