COMPLEMENTARY GALLIUM NITRIDE INTEGRATED CIRCUITS AND METHODS OF THEIR FABRICATION

摘要

An embodiment of a complementary GaN integrated circuit includes a GaN layer with a first bandgap. A second layer with a second bandgap is formed on the GaN layer, resulting in a 2DEG in a contact region between the GaN layer and the second layer. The second layer has a relatively thin portion and a relatively thick portion. A third layer is formed over the relatively thick portion of the second layer. The third layer has a third bandgap that is different from the second bandgap, resulting in a 2DHG in a contact region between the second layer and the third layer. A transistor of a first conductivity type includes the 2DHG, the relatively thick portion of the second layer, and the third layer, and a transistor of a second conductivity type includes the 2DEG and the relatively thin portion of the second layer.

主权项

1. A monolithic integrated circuit comprising:
a gallium nitride (GaN) layer having a top surface and a first bandgap; a second layer formed over the top surface of the GaN layer and having a first portion and a second portion, wherein the second layer has a second bandgap that is different from the first bandgap, resulting in a two dimensional electron gas (2DEG) in a contact region between the GaN layer and the second layer, and wherein the first portion of the second layer is formed over a first region of the GaN layer, and the second portion of the second layer is formed over a second region of the GaN layer; and a third layer formed over the second portion of the second layer, wherein the third layer has a third bandgap that is different from the second bandgap, resulting in a two dimensional hole gas (2DHG) in a contact region between the second layer and the third layer.