发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is sandwiched between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected to each other in an opening provided in a gate insulating film through an oxide conductive layer. |
申请公布号 |
US2015041806(A1) |
申请公布日期 |
2015.02.12 |
申请号 |
US201414521716 |
申请日期 |
2014.10.23 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
YAMAZAKI Shunpei;SAKATA Junichiro;SAKAKURA Masayuki;OIKAWA Yoshiaki;OKAZAKI Kenichi;MARUYAMA Hotaka;TSUBUKU Masashi |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Atsugi-shi JP |