| 发明名称 |
THIN LIGHT EMITTING DIODE AND FABRICATION METHOD |
| 摘要 |
A method for fabrication a light emitting diode (LED) includes growing a crystalline LED structure on a growth substrate, forming alternating material layers on the LED structure to form a reflector on a back side opposite the growth substrate and depositing a stressor layer on the reflector. A handle substrate is adhered to the stressor layer. The LED structure is separated from the growth substrate using a spalling process to expose a front side of the LED structure. |
| 申请公布号 |
US2015041756(A1) |
申请公布日期 |
2015.02.12 |
| 申请号 |
US201314021354 |
申请日期 |
2013.09.09 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Bedell Stephen W.;Hekmatshoartabari Bahman;Sadana Devendra K.;Shahrjerdi Davood |
| 分类号 |
H01L33/10;H01L33/06 |
主分类号 |
H01L33/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A light emitting diode (LED), comprising:
a crystalline LED structure including a plurality of alternating crystalline layers; a distributed Bragg reflector (DBR) formed on a back side of the LED structure and including alternating material layers; a stressor layer formed on the reflector; a substrate adhered to the stressor layer; and a conductive material formed on a front side of the LED structure such that the front side is configured to permit emission of light. |
| 地址 |
Armonk NY US |
