SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, METHOD FOR PRODUCING SAME, AND METHOD FOR PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

This silicon carbide semiconductor substrate comprises a base substrate (1) made from single crystal silicon carbide and having a principal surface area with an outer diameter of 100mm or more, and an epitaxial layer (2) formed on the principal surface (1A). The silicon carbide semiconductor substrate (10) has a warpage of -100μm to 100μm when the substrate temperature is at room temperature, and from -1.5mm to 1.5mm when the substrate temperature is 400°C.