| 摘要 |
<p>The present invention suggests a manufacturing method of a semiconductor device comprising; a step of preparing a substrate including first and second areas; a step of forming active pins in the first and second area; a step of forming gate electrodes which are crossed with the active pins and have sides facing with sides of the active pins; a step of forming an off-set zero insulating film which covers the active pins; a step of forming a first residual etching prevention film which covers the first area and a first hard mask pattern; a step of injecting a first foreign matter into the active pins of the second area; a step of eliminating the first hard mask pattern and the first residual etching prevention film; a step of forming a second residual etching prevention film which covers the second area and a second hard mask pattern; a step of injecting a second foreign matter into the active pins of the first area; and a step of eliminating the second residual etching prevention film and the second hard mask pattern. The manufacturing method of the semiconductor device can accurately defines an ion injection area located in a depth place by using an organic film (hard mask pattern) in which a vertical profile is good in the ion injection process.</p> |
