| 摘要 |
<p>Disclosed are a template for fabricating light emitting device and a method of fabricating an ultraviolet light emitting device. The template for fabricating light emitting device includes a substrate, a GaN layer located on the substrate, an AlN layer located on the GaN layer, a first n-type semiconductor layer which is located on the AlN layer and includes Al_xGa_(1-x)N(0<x<1), and a second supper lattice layer which is located on the first n-type semiconductor layer and includes a Al_ya_(1-y)N layer (0<y<1)/Alza(1-z)bN layer (0<z<1). Accordingly, the superior crystallinity of the semiconductor layers formed on the template can be achieved.</p> |
