发明名称 |
Isolation region, semiconductor device and methods for forming the same |
摘要 |
An isolation region is provided. The isolation region includes a first groove and an insulation layer filling the first groove. The first groove is embedded into a semiconductor substrate and includes a first sidewall, a bottom surface and a second sidewall that extends from the bottom surface and joins to the first sidewall. An angle between the first sidewall and a normal line of the semiconductor substrate is larger than a standard value. A method for forming an isolation region is further provided. The method includes: forming a first trench on a semiconductor substrate, wherein an angle between a sidewall of the first trench and a normal line of the semiconductor substrate is larger than a standard value; forming a mask on the sidewall to form a second trench on the semiconductor substrate by using the mask; and forming an insulation layer to fill the first and second trenches. A semiconductor device and a method for forming the same are still further provided. In the semiconductor device, a material of the semiconductor substrate is interposed between a second groove bearing a semiconductor layer for forming an S/D region and the first and second sidewalls. The present invention is beneficial to reduce leakage current. |
申请公布号 |
GB2486978(B) |
申请公布日期 |
2015.02.11 |
申请号 |
GB20110022114 |
申请日期 |
2011.02.18 |
申请人 |
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OFSCIENCES |
发明人 |
HAIZHOU YIN;HUILONG ZHU;ZHIJIONG LUO |
分类号 |
H01L21/76;H01L21/762 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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