| 摘要 |
The present invention relates to a memory device. The memory device includes a lower electrode, a magnetic tunnel junction, a capping layer, a composite exchange diamagnetic layer, and an upper electrode laminated onto each other on a substrate. The lower electrode is formed by laminating a first lower electrode having a polycrystalline structure and a second lower electrode having an amorphous structure. The magnetic resistance change ratio of the capping layer according to the thickness change is within 35%. |
