| 摘要 |
Provided is a semiconductor device. The semiconductor device includes a first fin and a second pin which are adjacent to a substrate in a long-side direction, a first elevated doping region which is formed on the first fin and includes the first doping concentration of impurity, a second elevated doping region which is formed on the second fin and includes the first doping concentration of impurity, and a first bridge which connects the first elevated doping region and the second elevated doping region and includes the second doping concentration of impurity. The doping concentration is different from the second doping concentration. |
