| 摘要 |
Provided are a semiconductor device capable of reducing parasitic capacitance between adjacent conductive structures, and a method for fabricating the same. A semiconductor device according to the present technique may include bit line structures which include a bit line formed on a substrate; a first plug structure formed between the bit line structures; an air gap formed between the bit line structure and the first plug structure; a second plug structure which caps part of the air gap on the first plug structure; and a capping structure which caps the rest of the air gap. |
