发明名称 N-CHANNEL TRANSISTOR
摘要 <p>An ambipolar light-emitting transistor comprising an organic semiconductive zone between an electron injecting electrode and a hole injecting electrode, that is capable of emitting light from the semiconductive zone when operated in a biasing regime in which negative electrons are injected from an electron injecting electrode into the organic semiconductive zone and positive holes are injected from a hole injecting electrode into the organic semiconductive zone.</p>
申请公布号 EP1704587(B1) 申请公布日期 2015.02.11
申请号 EP20050701900 申请日期 2005.01.17
申请人 CAMBRIDGE ENTERPRISE LIMITED 发明人 CHUA, LAY-LAY;HO, PETER, KIAN-HOON;FRIEND, RICHARD, HENRY
分类号 H01L21/312;H01L51/00;H01L51/05;H01L51/30;H01L51/50;H01L51/52 主分类号 H01L21/312
代理机构 代理人
主权项
地址