<p>An ambipolar light-emitting transistor comprising an organic semiconductive zone between an electron injecting electrode and a hole injecting electrode, that is capable of emitting light from the semiconductive zone when operated in a biasing regime in which negative electrons are injected from an electron injecting electrode into the organic semiconductive zone and positive holes are injected from a hole injecting electrode into the organic semiconductive zone.</p>
申请公布号
EP1704587(B1)
申请公布日期
2015.02.11
申请号
EP20050701900
申请日期
2005.01.17
申请人
CAMBRIDGE ENTERPRISE LIMITED
发明人
CHUA, LAY-LAY;HO, PETER, KIAN-HOON;FRIEND, RICHARD, HENRY