| 摘要 |
In the present invention, provided is a chemically amplified positive type photoresist composition for TFT, which forms resist patterns of TFT with high resolution and dimension controllability and a good formation of square, comprising (A) an acid generator of an oxime ester based compound and (B) a resin with improved solubility for alkalis due to acid activity which satisfy with a specific structure having high sensitivity. |
