| 摘要 |
A magnetic memory device is provided. The magnetic memory device includes a free magnetic structure and a reference magnetic structure which are spaced apart from each other with a tunnel barrier interposed therebetween. Provided are an exchange coupling layer and a first free layer and a second free layer which are spaced apart from each other with the exchange coupling layer interpose therebetween. The first free layer is provided between the second free layer and the tunnel barrier. The thickness of the first free layer is thicker than a thickness in which perpendicular anisotropy of the first free layer is maximum, and the thickness of the second free layer is thinner than a thickness in which perpendicular anisotropy of the second free layer is maximum. Therefore, a magnetoresistance ratio of the magnetic memory device may be improved while reducing a switching current by two free layers having different thicknesses. |
