发明名称 |
OPTOELECTRONIC SEMICONDUCTING STRUCTURE WITH NANOWIRES AND METHOD OF FABRICATING SUCH A STRUCTURE |
摘要 |
<p>The invention concerns an optoelectronic semiconductor structure (100) including a semiconductor substrate (110) including a first face (111), a nucleation layer (120) and a nanowire (160) in contact with the nucleation layer. The nucleation layer (120) covers a portion of the first face (111) which is called the "nucleation" face, and where the portion (114) of the first face (111) not covered by the nucleation layer (120) is called the "free" portion. The structure also includes a conducting layer (141) in contact with the free portion (114) of the substrate (110), where the said conducting layer is also in contact with the nanowire over the perimeter of the nanowire (160). The invention also concerns a method of manufacture of such a structure (100).</p> |
申请公布号 |
EP2834189(A1) |
申请公布日期 |
2015.02.11 |
申请号 |
EP20130713439 |
申请日期 |
2013.03.29 |
申请人 |
COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIESALTERNATIVES |
发明人 |
POUGEOISE, EMILIE;BAVENCOVE, ANNE-LAURE;VANDENDAELE, WILLIAM |
分类号 |
B82Y10/00;B82Y99/00;H01L31/0224;H01L31/0352;H01L33/04;H01L33/24;H01L33/38 |
主分类号 |
B82Y10/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|