| 摘要 |
Provided is a semiconductor device and a method for fabricating the same. The semiconductor device includes: a metal interconnection formed in a low dielectric layer; and a capping layer which includes a first part covering the upper side of the metal interconnection, and a second part covering the upper side of the low dielectric layer. The chemical composition of the first part of the capping layer may be different from the chemical composition of the second part of the capping layer. |
