发明名称 METHOD FOR PRODUCING MROM MEMORY BASED ON OTP MEMORY
摘要 A method of producing a MROM memory based on an OTP memory is provided. The method includes: removing the floating gate of the second PMOS transistor of the OTP memory cell for storing data “0” in the OTP memory map, such that the OTP memory cell being transferred to a MROM memory cell for storing data “0”, and retaining the original structure of the OTP memory cell for storing data “1” in the OTP memory map, such that the original structure being used as a MROM memory cell for storing data “1”, thus forming a MROM memory map; and producing a MROM memory according to the MROM memory map. According to the present invention, the OTP memory map which is debugged and has determined data can be changed into the MROM memory map, and the OTP process can be transferred into the MROM process by adjusting only one mask during the producing process. The present invention greatly saves the time and cost of the device programming and testing, thus simplifying the process and saving the cost, increasing the profit.
申请公布号 KR20150016219(A) 申请公布日期 2015.02.11
申请号 KR20147029874 申请日期 2013.05.09
申请人 发明人
分类号 H01L21/8246;H01L27/112 主分类号 H01L21/8246
代理机构 代理人
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