| 发明名称 | Semiconductor memory device and operation method thereof | ||
| 摘要 | A semiconductor memory device includes an information generation unit configured to convert positions of threshold voltages of memory cells in threshold voltage distributions based on determination voltages included in an overlapping portion between the threshold voltage distributions to generate a plurality of position information codes, and an error correction unit configured to sequentially receive the plurality of position information codes and perform an error correction operation for data of the memory cells. | ||
| 申请公布号 | US8953375(B2) | 申请公布日期 | 2015.02.10 |
| 申请号 | US201213591941 | 申请日期 | 2012.08.22 |
| 申请人 | SK Hynix Inc. | 发明人 | Rho Jun-Rye;Choi Seok-Hwan |
| 分类号 | G11C16/06 | 主分类号 | G11C16/06 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A semiconductor memory device comprising: an information generation unit configured to convert positions of threshold voltages of memory cells in threshold voltage distributions based on determination voltages included in an overlapping portion between the threshold voltage distributions to generate a plurality of position information codes; and an error correction unit configured to sequentially receive the plurality of position information codes and perform an error correction operation for data of the memory cells. | ||
| 地址 | Gyeonggi-do KR | ||