Semiconductor device and method of fabrication

摘要

A semiconductor memory device employs a SONOS type memory architecture and includes a bit line diffusion layer in a shallow trench groove in which a conductive film is buried. This makes it possible to decrease the resistivity of the bit line diffusion layer without enlarging the area on the main surface of the semiconductor substrate, and to fabricate the semiconductor memory device having stable electric characteristics without enlarging the cell area. The bit line is formed by implanting ions into the sidewall of Si3N4.

主权项

1. A semiconductor device comprising:
a buried bit line structure having a groove in which a bit line is buried; a conductive layer on an inner surface of the groove; and an insulation film in contact with the conductive layer, the insulation film provided only along a side wall surface of the groove.