Semiconductor device having plural stacked chips

摘要

Disclosed herein is a device including a substrate and first and second chips stacked on the substrate. The first and second chips have penetration electrodes that are penetrating therethrough. Power terminals of the first and second chips are connected to each other and arranged in a first arrangement pitch. Signal terminals of the first and second chips are connected to each other and arranged in a second arrangement pitch that is smaller than the first arrangement pitch.

主权项

1. A semiconductor device comprising:
a substrate on which a plurality of substrate terminals including a plurality of substrate power supply terminals are provided; a first semiconductor chip stacked on the substrate, the first semiconductor chip having one surface on which a plurality of first chip terminals each connected to an associated one of the substrate terminals are provided and the other surface on which a plurality of second chip terminals including a plurality of chip power supply terminals and a plurality of chip signal terminals are provided; and a second semiconductor chip stacked on the first semiconductor chip, the second semiconductor chip having one surface on which a plurality of third chip terminals each connected to an associated one of the second chip terminals are provided, wherein the first semiconductor chip has a plurality of power supply penetration electrodes each penetrating through the first semiconductor chip and electrically connecting an associated one of the chip power supply terminals to an associated one of the substrate power supply terminals, each of the power supply penetration electrodes is vertically aligned with the associated one of the chip power supply terminals and the associated one of the substrate power supply terminals, and the chip signal terminals have an arrangement pitch smaller than an arrangement pitch of the chip power supply terminals.