| 发明名称 | Electronic device and its manufacturing method | ||
| 摘要 | An electronic device includes a substrate, a sidewall that is disposed on the substrate and forms a cavity, a first layer that is disposed on the sidewall and covers the cavity, a second layer that is formed on the first layer and has a region disposed outside an outline of the first layer in a plan view, a dielectric layer disposed below the region of the second layer disposed outside the outline of the first layer in a plan view, and a functional element disposed inside the cavity. | ||
| 申请公布号 | US8952467(B2) | 申请公布日期 | 2015.02.10 |
| 申请号 | US201314046423 | 申请日期 | 2013.10.04 |
| 申请人 | Seiko Epson Corporation | 发明人 | Yoshizawa Takahiko |
| 分类号 | H01L31/18;H01L29/84;B81B7/00;B81C1/00;B81B7/02 | 主分类号 | H01L31/18 |
| 代理机构 | Oliff PLC | 代理人 | Oliff PLC |
| 主权项 | 1. An electronic device comprising: a substrate; a sidewall that is disposed on the substrate and forms a cavity; a first layer that is disposed on the sidewall and covers the cavity; a second layer that is formed on the first layer and has a region disposed outside an outline of the first layer in a plan view, the first layer and the second layer having common through holes penetrating to the cavity; a dielectric layer disposed below the region of the second layer disposed outside the outline of the first layer in a plan view; a functional element disposed inside the cavity; and a third layer formed on the second layer, the third layer sealing the through holes. | ||
| 地址 | Tokyo JP | ||