Semiconductor device, designing method therefor, and manufacturing method therefor

摘要

In a semiconductor device including active regions which are adjacent to each other with an element isolation region interposed therebetween and which are different in height from the element isolation region, when a contact is formed in a gate wiring on the element isolation region, a contact failure is caused. Provided is a semiconductor device including an element isolation region, two active regions adjacent to each other with the element isolation region interposed therebetween and having surfaces which are higher than that of the element isolation region, a gate wiring commonly led from the respective active regions and extending through the element isolation region, and a contact for connecting the gate wiring to a conductor layer above the gate wiring. The contact is provided in a region other than the element isolation region, or is provided in an expanded element isolation region.

主权项

1. A semiconductor device, comprising:
an element isolation region formed on a semiconductor substrate; an active region defined by the element isolation region; a first gate stack including a first High-K material and a first metal material so that the first gate stack has a first work function, the first gate stack extending on the active region and the element isolation region; a second gate stack including a second High-K material and a second metal material so that the second gate stack has a second work function different from the first work function, the second gate stack extending on the element isolation region so that a gap is provided on the element isolation region between the first and second gate stacks; a first conductive layer formed on the first and second gate stacks and in the gap; a second conductive layer formed on the first conductive layer so that the second conductive layer extends over the first and second gate stacks and the gap; an insulating film formed on the second conductive layer so that the insulating film extends over the first and second gate stacks and the gap, the insulating film having a contact hole exposing the second conductive layer over a portion overlapping the element isolation region and one of the first and second gate stacks; and a contact formed in the contact hole.