| 发明名称 | Gate dielectric layer having interfacial layer and high-K dielectric over the interfacial layer | ||
| 摘要 | A semiconductor device includes a substrate having a first active region, a first gate structure over the first active region, wherein the first gate structure includes a first interfacial layer having a convex top surface, a first high-k dielectric over the first interfacial layer, and a first gate electrode over the first high-k dielectric. | ||
| 申请公布号 | US8952458(B2) | 申请公布日期 | 2015.02.10 |
| 申请号 | US201113086491 | 申请日期 | 2011.04.14 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Lee Wei-Yang;Yu Xiong-Fei;Lee Da-Yuan;Hsu Kuang-Yuan |
| 分类号 | H01L21/70;H01L21/02;H01L21/8238;H01L29/423;H01L21/28;H01L29/51;H01L29/66 | 主分类号 | H01L21/70 |
| 代理机构 | Lowe Hauptman & Ham, LLP | 代理人 | Lowe Hauptman & Ham, LLP |
| 主权项 | 1. A semiconductor device comprising: a substrate having a first active region, wherein the first active region has a planar top surface; a first gate structure over the first active region, wherein the first gate structure comprises a first interfacial layer, wherein an entirety of a top surface of the first interfacial layer is a curved convex surface; a first high-k dielectric over the first interfacial layer; and a first gate electrode over a first portion of the first high-k dielectric and surrounded by a second portion of the first high-k dielectric. | ||
| 地址 | TW | ||