Method for fabricating patterned structure of semiconductor device

摘要

A method of fabricating a patterned structure of a semiconductor device is provided. First, a substrate having a first region and a second region is provided. A target layer, a hard mask layer and a first patterned mask layer are then sequentially formed on the substrate. A first etching process is performed by using the first patterned mask layer as an etch mask so that a patterned hard mask layer is therefore formed. Spacers are respectively formed on each sidewall of the patterned hard mask layer. Then, a second patterned mask layer is formed on the substrate. A second etching process is performed to etch the patterned hard mask layer in the second region. After the exposure of the spacers, the patterned hard mask layer is used as an etch mask and an exposed target layer is removed until the exposure of the corresponding substrate.

主权项

1. A method of fabricating of a patterned structure of a semiconductor device, comprising:
providing a substrate comprising a first region and a second region; sequentially forming a target layer, a hard mask layer and a first patterned mask layer on the substrate; performing a first etching process by using the first patterned mask layer as an etch mask, so as to etch the hard mask layer in the first region and form a patterned hard mask layer; respectively forming a spacer on each sidewall of the patterned hard mask layer; forming a second patterned mask layer on the substrate after the step of forming the spacers, wherein the second patterned mask layer directly contacts each of the spacers; performing a second etching process by using the second patterned mask layer as an etch mask, so as to etch the patterned hard mask layer in the second region and concurrently expose each of the spacers; and after exposing the spacers, removing the target layer by using the patterned hard mask layer as an etch mask until the substrate is exposed.