Method for fabricating semiconductor device, and method for fabricating display device

摘要

A method for fabricating a semiconductor device includes a first step of forming, on a first substrate, a first element region in which a plurality of elements are collectively arranged, a second step of relocating the plurality of elements formed on the first substrate to a holding member in the same arrangement as in the first element region to have the plurality of elements held on the holding member, a third step of rearranging the plurality of elements held on the holding member and having the plurality of elements held on an intermediate substrate, thereby forming a second element region having a shape different from a shape of the first element region on the intermediate substrate, and a fourth step of dispersing the plurality of elements held on the intermediate substrate and adhering the plurality of elements to a second substrate.

主权项

1. A method for fabricating a semiconductor device in which a plurality of elements are dispersed, the method comprising:
a first step of forming, on a first substrate, a first element region in which the plurality of elements are collectively arranged; a second step of relocating the plurality of elements formed on the first substrate to a holding member in the same arrangement as in the first element region to have the plurality of elements held on the holding member; a third step of rearranging the plurality of elements held on the holding member and having the plurality of elements held on an intermediate substrate, thereby forming a second element region having a shape different from a shape of the first element region on the intermediate substrate; and a fourth step of dispersing the plurality of elements held on the intermediate substrate and adhering the plurality of elements to a second substrate, wherein each of the plurality of elements is any one of a thin film transistor, a circuit including the thin film transistor, a light emitting element, a light receiving element, a power generating element, and a piezoelectric element, or an element or a circuit comprised of a combination of two or more of the thin film transistor, the circuit including the thin film transistor, the light emitting element, the light receiving element, the power generating element, and the piezoelectric element.