| 主权项 |
1. A method for preparing switch transistor, comprising:
sequentially forming a control electrode, an insulation layer, an active layer, and a source/drain metal layer of the switch transistor on a glass substrate, the active layer comprising an amorphous silicon layer adjacent to the insulation layer and an n+ amorphous silicon layer formed on the amorphous silicon layer; patterning the source/drain metal layer to expose the n+ amorphous silicon layer and correspondingly forming an input electrode and an output electrode of the switch transistor; and proceeding an etching process to the exposed active layer in a way of gradually reducing etching rate to form a channel of the switch transistor, which comprises using a plasma etching with first energy to etch the exposed n+ amorphous silicon layer to expose the amorphous silicon layer, and using a plasma etching with second energy to etch the exposed amorphous silicon layer to remove a part of the amorphous silicon layer; wherein the second energy is less than the first energy, which gradually reduces the etching rate; wherein, the etching process is a dry plasma etching, the switch transistor is a thin film transistor, the control electrode of the switch transistor is corresponding to a gate of the thin film transistor, and the input electrode and the output electrode are a source and a drain of the thin film transistor, respectively. |
