Method to induce strain in 3-D microfabricated structures

摘要

Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed in two epitaxial layers that are grown over a bulk substrate. A first thin epitaxial layer may be cut and used to impart strain to an adjacent channel region of the finFET via elastic relaxation. The structures exhibit a preferred design range for increasing induced strain and uniformity of the strain over the fin height.

主权项

1. A strained-channel finFET structure formed on a substrate comprising:
a strain-inducing feature adjacent to a fin of the finFET structure, wherein the strain-inducing feature is formed from a first semiconductor material having a first strain; and the fin formed from a second semiconductor material that is strained by the strain-inducing feature.