发明名称 Apparatuses and methods for efficient write in a cross-point array
摘要 A memory circuit, including a memory array (such as a cross-point array), may include circuit elements that may function both as selection elements/drivers and de-selection elements/drivers. A selection/de-selection driver may be used to provide both a selection function as well as an operation function. The operation function may include providing sufficient currents and voltages for WRITE and/or READ operations in the memory array. When the de-selection path is used for providing the operation function, highly efficient cross-point implementations can be achieved. The operation function may be accomplished by circuit manipulation of a de-selection supply and/or de-selection elements.
申请公布号 US8953387(B2) 申请公布日期 2015.02.10
申请号 US201313914170 申请日期 2013.06.10
申请人 Micron Technology, Inc. 发明人 Castro Hernan
分类号 G11C7/00;G11C13/00 主分类号 G11C7/00
代理机构 Knobbe, Martens, Olson & Bear, LLP 代理人 Knobbe, Martens, Olson & Bear, LLP
主权项 1. An apparatus comprising: a memory cell electrically coupled to a first line and to a second line; and a driver circuit electrically coupled to the first line and to the second line, the driver circuit configured to: provide both a selection mode of operation and a de-selection mode of operation for the memory cell;receive at least a first voltage reference, a second voltage reference, and a third voltage reference, wherein each of the first voltage reference, the second voltage reference, and the third voltage reference is different from one another, wherein the first voltage reference is higher in voltage than the second voltage reference, wherein the second voltage reference is higher in voltage than the third voltage reference;when in the selection mode of operation, bias the memory cell based on the first voltage reference and the third voltage reference such that the driver circuit is configured to: provide the first reference voltage to the first line,provide the third reference voltage to the second line, andafter a snapback event, provide the second voltage reference to the first line; andwhen in the de-selection mode of operation, bias the memory cell based on at least the second voltage reference such that the driver circuit is configured to provide the second voltage reference to each of the first line and the second line.
地址 Boise ID US
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