发明名称 |
Reconfigurable integrated circuit device and writing method thereof |
摘要 |
A reconfigurable integrated circuit device includes a memory unit for storing configuration information. The memory unit has a nonvolatile memory transistor having a gate connected to a first wire, a first terminal connected to a second wire, and a second terminal connected to a third wire. The memory unit also includes a switch circuit connected to the third wire. The switch circuit alters the configuration of the integrated circuit device by, for example, opening and closing to make wiring connections or disconnections. The integrated circuit device additionally includes a data supply circuit for supplying bit data and a first power supply circuit for supplying voltages to the first wire for storing bit data in the first nonvolatile memory transistor and for storing bit data as a charge level on the third wire. |
申请公布号 |
US8952720(B2) |
申请公布日期 |
2015.02.10 |
申请号 |
US201313774668 |
申请日期 |
2013.02.22 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Oda Masato;Yasuda Shinichi;Zaitsu Koichiro |
分类号 |
H03K19/173;G11C16/02;H03K19/00;H03K19/177 |
主分类号 |
H03K19/173 |
代理机构 |
Patterson & Sheridan, LLP |
代理人 |
Patterson & Sheridan, LLP |
主权项 |
1. A reconfigurable integrated circuit device comprising:
a memory unit for storing configuration information, the memory unit including:
a first nonvolatile memory transistor having a gate connected to a first wire, a first terminal connected to a second wire, and a second terminal connected to a third wire:a switch circuit connected to the third wire; anda capacitor connected to the third wire; a data supply circuit configured to supply bit data to the second wire; and a power supply circuit configured to supply a write voltage to the first wire as a result of which the bit data is stored in the first nonvolatile memory transistor as a charge level and to supply a select voltage and then a non-select voltage to the first wire as a result of which the bit data is stored in the third wire as a charge level. |
地址 |
Tokyo JP |