Method and apparatus of forming a gate

摘要

The present disclosure provides an apparatus that includes a semiconductor device. The semiconductor device includes a substrate. The semiconductor device also includes a first gate dielectric layer that is disposed over the substrate. The first gate dielectric layer includes a first material. The first gate dielectric layer has a first thickness that is less than a threshold thickness at which a portion of the first material of the first gate dielectric layer begins to crystallize. The semiconductor device also includes a second gate dielectric layer that is disposed over the first gate dielectric layer. The second gate dielectric layer includes a second material that is different from the first material. The second gate dielectric layer has a second thickness that is less than a threshold thickness at which a portion of the second material of the second gate dielectric layer begins to crystallize.

主权项

1. An apparatus, comprising a semiconductor device that includes:
a substrate; a first gate dielectric layer having a first material and being disposed over the substrate; a second gate dielectric layer having a second material and being disposed over the first gate dielectric layer; a third gate dielectric layer having the first material and being disposed over the second gate dielectric layer; a fourth gate dielectric layer having the second material and being disposed over the third gate dielectric layer; wherein the first material and the second material each include a high-k material, and wherein the second material is different from the first material, and wherein the first gate dielectric layer is in physical contact with the second gate dielectric layer.