Memory device and method of forming the same

摘要

Provided is a memory device including a first dielectric layer, a T-shaped gate, two charge storage layers and two second dielectric layers. The first dielectric layer is disposed on a substrate. The T-shaped gate is disposed on the first dielectric layer and has an upper gate and a lower gate, wherein two gaps are present respectively at both sides of the lower gate and between the upper gate and the substrate. The charge storage layers are respectively embedded into the gaps. A second dielectric layer is disposed between each charge storage layer and the upper gate, between each charge storage layer and the lower gate and between each charge storage layer and the substrate.

主权项

1. A memory device, comprising:
a first dielectric layer, disposed on a substrate; a T-shaped gate, disposed on the first dielectric layer and having an upper gate and a lower gate, wherein two gaps are present respectively at two sides of the lower gate and between the upper gate and the substrate, and the upper gate and the lower gate are in direct contact with each other; two charge storage layers, respectively embedded into the gaps, wherein a bottom of each of the charge storage layers is not lower than a top of the first dielectric layer; and a second dielectric layer, disposed between each charge storage layer and the upper gate, between each charge storage layer and the lower gate and between each charge storage layer and the substrate.