Semiconductor device having direct connecting structure including first detector, second detector, first transistor, and second transistor elements

摘要

The semiconductor device includes a plurality of pixels arranged in rows and columns, and first transistors fewer than the number of the plurality of pixels. The plurality of pixels each includes a photodiode and an amplifier circuit. The amplifier circuit holds the accumulated charge and includes at least a second transistor electrically connected to a cathode of the photodiode. The cathode of the photodiode in the pixel in an n-th row and the cathode of the photodiode in the pixel in an (n+1)-th row are electrically connected to the first transistor. The number n is a natural number. The pixel in the n-th row and the pixel in the (n+1)-th row are in an identical column.

主权项

1. A semiconductor device comprising:
a first photodiode; a second photodiode; a first transistor; a second transistor; a third transistor; and an output line, wherein an electrode of the first photodiode is directly connected to one of a source and a drain of the first transistor, wherein the other of the source and the drain of the first transistor is electrically connected to the output line, wherein an electrode of the second photodiode is directly connected to one of a source and a drain of the second transistor, wherein the other of the source and the drain of the second transistor is electrically connected to the output line, wherein one of a source and a drain of the third transistor is directly connected to the electrode of the first photodiode, and wherein the other of the source and the drain of the third transistor is directly connected to the electrode of the second photodiode.