High voltage device with reduced leakage

摘要

A semiconductor device is provided which includes a semiconductor substrate, a gate structure formed on the substrate, sidewall spacers formed on each side of the gate structure, a source and a drain formed in the substrate on either side of the gate structure, the source and drain having a first type of conductivity, a lightly doped region formed in the substrate and aligned with a side of the gate structure, the lightly doped region having the first type of conductivity, and a barrier region formed in the substrate and adjacent the drain. The barrier region is formed by doping a dopant of a second type of conductivity different from the first type of conductivity.

主权项

1. A method for fabricating a semiconductor device, comprising:
providing a semiconductor substrate; forming a first well in the semiconductor substrate, the first well having a first type of conductivity; forming a second well in the semiconductor substrate, the second well having a second type of conductivity different from the first type of conductivity; forming a gate structure on the semiconductor substrate, the gate structure having a first portion overlying the first well and a second portion overlying the second well; forming a barrier region in the first well, the barrier region being formed by doping a dopant of the second type of conductivity; and forming a source in the second well and a drain in the first well, the source and drain having the first type of conductivity, the drain being adjacent the barrier region, wherein the barrier region does not extend to the source.