| 发明名称 | Method of manufacturing low temperature polysilicon film, thin film transistor and manufacturing method thereof | ||
| 摘要 | A method of manufacturing a low temperature polysilicon film comprises: providing a substrate on a platform; forming a buffer layer on said substrate; forming an amorphous silicon layer on said buffer layer; and heating and annealing said amorphous silicon layer to allow said amorphous silicon layer to form a polycrystalline silicon layer; wherein a thermal insulating layer is formed on a bottom surface of said substrate or a top surface of the platform, before said buffer layer is formed on said substrate. | ||
| 申请公布号 | US8951851(B2) | 申请公布日期 | 2015.02.10 |
| 申请号 | US201314086207 | 申请日期 | 2013.11.21 |
| 申请人 | Boe Technology Group Co., Ltd. | 发明人 | Tian Xueyan;Long Chunping |
| 分类号 | H01L29/66;H01L21/02;C30B13/24;C30B29/06;B23K26/00;B23K26/06;B23K26/073;B23K26/08 | 主分类号 | H01L29/66 |
| 代理机构 | Ladas & Parry LLP | 代理人 | Ladas & Parry LLP |
| 主权项 | 1. A method of manufacturing a low temperature polysilicon film, comprising: providing a substrate on a platform; forming a buffer layer on said substrate; forming an amorphous silicon layer on said buffer layer; and heat treating and laser annealing said amorphous silicon layer to allow it to form a polycrystalline silicon layer; wherein a thermal insulating layer is formed on a bottom surface of said substrate or a top surface of the platform, before said buffer layer is formed on said substrate. | ||
| 地址 | Beijing CN | ||