Memory with variable strength sense amplifier

摘要

Embodiments of a memory are disclosed that may reduce the likelihood of a misread while reading a weak data storage cell. The memory column may include a number of data storage cells, a column multiplexer, and a sense amplifier. The sense amplifier may have two or more gain elements which can be individually selected to adjust the gain level of the sense amplifier.

主权项

1. An apparatus, comprising:
a plurality of columns, wherein each of the columns includes a plurality of data storage cells, and wherein each data storage cell is configured to generate a column output in response to asserting a row selection signal; a column multiplexer coupled to receive input data from the plurality of columns, wherein the column multiplexer is configured to controllably select data from one of the plurality of columns to generate a column multiplexer output dependent upon a column selection signal; circuitry configured to:
detect cell strength of a given data storage cell;generate a gain selection signal dependent upon the detected cell strength;store cell strength information indicative of the detected cell strength; andcheck the stored cell strength information; and a sense amplifier configured to amplify input data from the column multiplexer, wherein the sense amplifier is controllable to provide a first gain level or a second gain level dependent upon a gain selection signal.