发明名称 |
Nonvolatile memory device and data storage device including the same |
摘要 |
A nonvolatile memory device includes: a plurality of memory cells arranged in a region where word lines and bit lines intersect, a data read/write circuit including a plurality of latches configured to temporarily store data inputted from an external device, and configured to perform a program operation on the memory cells based on data stored in the latches, and a skip data control unit configured to determine whether data to be programmed into the memory cells are available, and to store program-inhibit data in a latch corresponding to a memory cell which is determined to not contain any data. |
申请公布号 |
US8953377(B2) |
申请公布日期 |
2015.02.10 |
申请号 |
US201313779252 |
申请日期 |
2013.02.27 |
申请人 |
SK Hynix Inc. |
发明人 |
Lim Sang O |
分类号 |
G11C11/34;G11C16/06 |
主分类号 |
G11C11/34 |
代理机构 |
William Park & Associates Patent Ltd. |
代理人 |
William Park & Associates Patent Ltd. |
主权项 |
1. A nonvolatile memory device comprising:
a plurality of memory cells arranged in a region where word lines and bit lines intersect; a data read/write circuit comprising a plurality of latches configured to temporarily store data inputted from an external device, and configured to perform a program operation on the memory cells based on data stored in the latches; and a skip data control unit configured to determine whether or not data corresponding to each of the memory cells is inputted, to determine a memory cell as a skip memory cell when data corresponding to the memory cell is determined not to be inputted, and to store program-inhibit data in a latch corresponding to the skip memory cell. |
地址 |
Gyeonggi-do KR |