发明名称 Nonvolatile memory device and data storage device including the same
摘要 A nonvolatile memory device includes: a plurality of memory cells arranged in a region where word lines and bit lines intersect, a data read/write circuit including a plurality of latches configured to temporarily store data inputted from an external device, and configured to perform a program operation on the memory cells based on data stored in the latches, and a skip data control unit configured to determine whether data to be programmed into the memory cells are available, and to store program-inhibit data in a latch corresponding to a memory cell which is determined to not contain any data.
申请公布号 US8953377(B2) 申请公布日期 2015.02.10
申请号 US201313779252 申请日期 2013.02.27
申请人 SK Hynix Inc. 发明人 Lim Sang O
分类号 G11C11/34;G11C16/06 主分类号 G11C11/34
代理机构 William Park & Associates Patent Ltd. 代理人 William Park & Associates Patent Ltd.
主权项 1. A nonvolatile memory device comprising: a plurality of memory cells arranged in a region where word lines and bit lines intersect; a data read/write circuit comprising a plurality of latches configured to temporarily store data inputted from an external device, and configured to perform a program operation on the memory cells based on data stored in the latches; and a skip data control unit configured to determine whether or not data corresponding to each of the memory cells is inputted, to determine a memory cell as a skip memory cell when data corresponding to the memory cell is determined not to be inputted, and to store program-inhibit data in a latch corresponding to the skip memory cell.
地址 Gyeonggi-do KR