Switching device having a non-linear element

摘要

A switching device includes a substrate; a first electrode formed over the substrate; a second electrode formed over the first electrode; a switching medium disposed between the first and second electrode; and a nonlinear element disposed between the first and second electrodes and electrically coupled in series to the first electrode and the switching medium. The nonlinear element is configured to change from a first resistance state to a second resistance state on application of a voltage greater than a threshold.

主权项

1. A switching device comprising:
a first electrode layer formed over a substrate; a nonlinear element disposed adjacent to the first electrode wherein the non-linear element is associated with an active threshold voltage and a hold threshold voltage; a resistive switching material disposed adjacent to the non-linear element, wherein the resistive switching material comprises a plurality of defect sites, wherein the resistive switching material is associated with a program threshold voltage; and a second electrode layer disposed adjacent to the resistive switching material, wherein the second electrode layer comprises a plurality of metal particles; wherein metal particles from the plurality of metal particles are disposed within defect sites of the resistive switching material, wherein a metal particle from the metal particles is separated from the non-linear element by a plurality of tunneling distances, wherein the plurality of tunneling distances are associated with a plurality of tunneling resistances, and wherein a state of the two-terminal memory device is associated with a tunneling resistance of the plurality of tunneling resistances; and wherein the active threshold voltage is less than the program threshold voltage.