Semiconductor devices having through-contacts and related fabrication methods

摘要

Apparatus for semiconductor device structures and related fabrication methods are provided. One method for fabricating a semiconductor device structure involves forming a layer of dielectric material overlying a doped region formed in a semiconductor substrate adjacent to a gate structure and forming a conductive contact in the layer of dielectric material. The conductive contact overlies and electrically connects to the doped region. The method continues by forming a second layer of dielectric material overlying the conductive contact, forming a voided region in the second layer overlying the conductive contact, forming a third layer of dielectric material overlying the voided region, and forming another voided region in the third layer overlying at least a portion of the voided region in the second layer. The method continues by forming a conductive material that fills both voided regions to contact the conductive contact.

主权项

1. A method of fabricating a device, the method comprising
providing a semiconductor substrate with a selected gate structure, a non-selected gate structure, and a doped region formed in the semiconductor substrate aligned with sidewalls of the gate structures, wherein the selected gate structure has a gate width; forming a first dielectric layer overlying the doped region and the gate structures; forming a conductive contact in the first dielectric layer and electrically connected to the doped region, wherein the conductive contact has a contact width; forming a second dielectric layer on the gate structures, the conductive contact, and the first dielectric layer; creating an intermediate structure exposing the conductive contact and a selected gate structure by simultaneously etching a contact opening and a gate opening in the second dielectric layer; wherein the contact opening exposes the conductive contact, has an aspect ratio of equal to or less than one, and has a contact opening width substantially equal to the contact width; and wherein the gate opening exposes the selected gate structure, has an aspect ratio of equal to or less than one, and has a gate opening width substantially equal to the gate width; forming a third dielectric layer on the second dielectric layer, on the conductive contact in the contact opening, and on the selected gate structure in the gate opening; forming a contact void in the third dielectric layer overlying the contact opening and a gate void in the third dielectric layer overlying the gate opening and removing the third dielectric layer from the contact opening and from the gate opening; and forming a metal interconnect layer on the third dielectric layer, wherein the metal interconnect layer fills the contact void and the contact opening to contact the conductive contact and fills the gate void and the gate opening to contact the selected gate structure, wherein a non-selected gate structure is insulated from the metal interconnect layer by the second dielectric layer.