| 摘要 |
<p>The purpose of an embodiment of the present invention is to provide a method of manufacturing a solid-state imaging device capable of reducing a dark current, and the solid-state imaging device. According to an embodiment of the present invention, provided is a method of manufacturing a solid-state imaging device. In the method of manufacturing a solid-state imaging device, a second conductivity type semiconductor region is arranged with 2D matrix type on a first conductivity type semiconductor layer so that photoelectric conversion devices are formed. Seen from a plane-view, a lattice-shaped trench is formed in order to divide a semiconductor layer, thereby changing a photoelectric conversion device into a rectangular shape seen from the plane. The rectangular photoelectric conversion device is changed into a convex polygon shape seen from the plane. After the inner surface of a trench is covered with an insulating layer, a light shielding member is installed to the trench covered with the insulating layer so that a device isolation layer is formed.</p> |
